Rare Precious Metal Ta

Applications: integrated circuit resistance and diffusion layer film, semiconductor functional film,

TA is a refractory metal, with a melting point of 2996 ℃. Tantalum rotating coating target can be prepared by high temperature spray forming process

Element		Ta	O	N	C	Fe	Si	H
wt (%)		≥ 99.9%	≤0.08	≤0.005	≤0.005	≤0.003	≤0.003	≤0.001

PSD		Flow Rate (sec/50g)	Apparent Density (g/cm₃)	Sphericity
15-53 μm		≤15s/50g	≥8.0g/cm₃	≥95%

Property	Target value
（20°C）Resistivity	≥15.5g/cm³
Target material thickness	6~10mm